The Aixtron Series | Part 1: Power Electronics

Key Points

• Aixtron builds MOCVD (Metal-Organic Chemical Vapor Deposition) machines that deposit atom-perfect crystal layers; precision in heat, pressure, gas flow controls whether chips are supercomputers or expensive paperweights
• Business segments: Silicon Carbide (SiC) - handles extreme voltages/temperatures for automotive/industrial; GaN - wide-bandgap replacement for silicon; Optoelectronics - light control (lasers, detectors); Displays
• Epitaxy process requires perfect crystal alignment ("Tetris-like"); atoms must lock into specific grid pattern extending crystal structure upward
• SiC and GaN represent secular growth trends replacing silicon for high-power applications as efficiency demands increase
• Part 1 covers background and power electronics bull case (SiC for automotive, GaN for power conversion); Parts 2-3 cover optoelectronics and financials

Summary

First part of comprehensive three-part analysis on Aixtron's business model, MOCVD technology, and power electronics end-markets (SiC/GaN). Explains why epitaxy equipment determines chip yield and introduces Aixtron's market opportunity across multiple end-markets.

Source

• File: Aixtron Deep Dive (Part 1)-Jason's Chips_Dec 25.pdf
• Location: Dropbox/2. Semi/Networking/AIXA/
• Pages: 9

Related

• _MOC-networking | AIXA | MOCVD | Power-Electronics | SiC | GaN